? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data data sheet 222, rev. b formerly part number shd22632 hermetic power mosfet n-channel features: ? 100 volt, .19 ohm, 11a mosfet ? isolated hermetic metal package ? fast switching ? low r ds (on) ? equivalent to irfy130m maximum ratings all ratings are at t c = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts on-state drain current i d - - 11 amps pulsed drain current i dm - - 44 amps operating and storage temperature t j /t stg -55 - +150 c total device dissipation p d - - 45 watts electrical characteristics drain to source breakdown voltage v gs = 0v, i d = 1.0 ma bv dss 100 - - volts static drain to source on state resistance v gs = 10v, i d = 7.0a r ds(on) - - .19 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 volts forward transconductance v ds 15v, i d = 7.0a g fs 3.0 - - s(1/ ) zero gate voltage drain current v ds = 0.8 x max. rating, v gs = 0v t j = 25 c i dss - - 25 250 a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = -20v i gss - - 100 -100 na turn on delay time v dd = 50v, rise time i d = 11a turn off delay time r g = 7.5 fall time t d(on) t r t d(off) t f - - 30 75 40 45 nsec diode forward voltage i s = 14a, v gs = 0v pulse test, t 300 s, duty cycle d 2 % v sd - 1.0 1.5 volts reverse recovery time t j = 25 c, v dd 50v di/dt = 100a/ sec t rr - - 300 nsec input capacitance v gs = 0 v output capacitance v ds = 25 v reverse transfer capac itance f = 1.0mhz c iss c oss c rss - 650 240 44 - pf thermal resistance, junction to case r thjc - - 2.8 c/w SHD226302
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron data sheet 222 rev. b revision - mechanical dimensions: in inches / mm SHD226302 123 .200 .190 (5.08 4.82) .045 .035 (1.14 0.89) .120(3.05) bsc .430 .410 (10.92 10.41) .420 .410 (10.67 10.41) .665 .645 (16.89 16.38) .537 .527 (13.64 13.39) 1.132 1.032 (28.75 26.21) .035 .025 (0.89 0.63) 3 places .100(2.54) bsc 2 places .150 .140 (3.81 3.56) dia. device type pin-1 pin-2 pin-3 n-channel mosfet to-257 package drain source gate to-257 disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns.
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